PdGe contact fabrication on Se-doped Ge
نویسندگان
چکیده
Article history: Received 22 December 2016 Received in revised form 12 June 2017 Accepted 15 June 2017 Available online xxxx PdGe contact fabrication on Se-doped Ge(001) is investigated. PdGe thin film resistivity is two times lower if the PdGe layer is grown by Pd reactive diffusion on Se-doped Ge, compared to PdGe layer grown in the same condition on Se-freeGe. The phase sequence and thephase growth kinetics during Pd reactive diffusionwithGe are not modified by the presence of Se atoms. However, the PdGe film texture is different with Se, and Se segregates at the PdGe/Ge interface. These results suggest that Se atoms may be used to produce efficient contacts on n-type Ge. © 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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